ON SEMICONDUCTOR

Technologies

On Smiconductor

EUROPRACTICE offers its customers access to the following ON Semiconductor technologies.

I4T 45V/70VThis full featured process includes 1.8 V/3.3 V dual gate I/Os, nominal and high value MIM capacitors, resistors, and six levels of metal. Specialty services including stitching, planarized passivation, shuttle prototyping are available. The I4T process is the only 180nm process available with deep trench isolation (DTI), which makes it uniquely suitable for high− voltage automotive applications. I4T also serves as a platform for highly integrated high voltage mixed−signal processes ideal for many automotive, industrial, medical, and military applications.
ONC18 18V18VThis technology includes 1.8 V dual gate I/Os, nominal and high value MIM capacitors, resistors, and six levels of metal. Specialty services including stitching, planarized passivation and shuttle prototyping are available. ONC18 also serves as a platform for highly integrated high voltage mixed−signal processes ideal for many automotive, industrial, medical, and defense applications.
ONC18 5V30VThis full featured process includes 1.8 V dual gate I/Os, nominal and high value MIM capacitors, resistors, and six levels of metal. Specialty services including stitching, planarized passivation, shuttle prototyping are available. ONC18 also serves as a platform for highly integrated high voltage mixed−signal processes ideal for many automotive, industrial, medical, and defense applications.
ONC18G/MSThis technology includes 1.8 V/3.3 V dual gate I/Os, nominal and high value MIM capacitors, resistors, and six levels of metal. Specialty services including stitching, planarized passivation, and shuttle prototyping are available. ONC18 also serves as a platform for highly integrated high voltage mixed−signal processes ideal for many automotive, industrial, medical, and defense applications.
ONC25The ONC25 process family is an ideal 0.25µm low cost solution to mixed−signal designs. ONC25 is designed for 2.5, 3.3, 5.0 V single−gate or 2.5 / 3.3 V or 2.5 / 5 V dual−gate operation with high−performance / low−power and mixed−signal 2.5 V or 5.0 V digital libraries, and mixed−signal features such as MIM capacitors, Schottky diodes, zener diodes, high resistivity poly, deep N−well for P−well isolation and under N−well in the digital blocks to optimize packing density. ONC25 provides the flexibility to implement a variety of mixed−signal applications.
ONBCD25ONBCD25 is a full−featured high voltage 0.25µm node technology. It contains 5 V single−gate or 5/12 V dual−gate high voltage transistors combined with mixed−signal features including MIM capacitors, Schottky diodes, zener diodes, high resistivity poly, plus a variety of npn/pnp bipolar transistors, capacitors, diodes and resistors. The high voltage transistors include optimized NLDMOS and high voltage PMOS 40/5 V, 40/12 V, 24/5 V and 12/12 V transistors. The high−performance / low−power 5 V digital library and one−time programmable (OTP) element offered in the baseline ONC25 technology are available as well. ONBCD25 provides the flexibility to implement a variety of mixed−signal functions in a product design.
C3/D3The C3/D3 process family is an ideal 0.35µm low cost solution to mixed−signal designs requiring a moderate amount of digital logic (up to 250 k gates). Optimized for 3.3 V operation with added devices for 5 V capability, high−performance, low−power, and mixed−signal digital libraries, and mixed−signal features such as poly−poly capacitors, Schottky diodes, and high resistivity poly. C3/D3 provides the flexibility to implement a variety of mixed−signal applications.
I3T25Providing the density of a 0.35µm digital process, analog/mixed−signal capability and high voltage, the Intelligent Interface Technology I3T25 process from ON Semiconductor is the answer to the need for increased digital content in a mixed−signal and/or high voltage environment. Featuring high voltage devices up to 18 V as well as digital and analog operation at 3.3 V and 12 V, the I3T25 process family features a wide range of capabilities in a single IC.
I3T50The ON Semiconductor Intelligent Interface Technology I3T50 process is the answer to the need for increased digital content in a mixed−signal and/or high voltage environment. It provides the density of a 0.35µm digital process, analog/mixed−signal capability and high voltage. Featuring high voltage devices up to 40 V as well as digital and analog operation at 3.3 V, the I3T50 process family is the first to use deep trenches for isolating high voltage devices.
I3T80Providing the density of a 0.35µm digital process, analog/mixed−signal capability and high voltage, the ON Semiconductor Intelligent Interface Technology I3T80 process is the answer to the need for increased digital content in a mixed−signal and/or high voltage environment. Featuring high voltage devices up to 80 V as well as digital and analog operation at 3.3 V, the I3T80 process family features a wide range of capabilities in a single IC.
C5Optimized for 5 V mixed−signal applications, the C5 process family from ON Semiconductor offers a medium−density, high−performance mixed−signal technology capable of integrating complex analog functions, digital content and 20 V capability. This process delivers the advantages of a dedicated mixed−signal 0.5µm process without the costs associated with the extra mask steps of a BCD process. Low−voltage transistors are also available for the 0.5µm process making it well−suited for low−power applications.
I2T100The Intelligent Interface Technology (I2T100) process from ON Semiconductor offers 100 V capability in a 0.7µm CMOS mixed−signal technology. A variety of devices and process options provide a high degree of flexibility in combining mixed analog/digital with low−, medium− and high−voltage circuitry.

The design kits provided by ON Semiconductor include a comprehensive suite of libraries enabling efficient design of leading-edge mixed-signal and smart power ASICs.

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