Technologies > IHP
IHP Technologies


IHP offers research partners and customers access to its powerful SiGe:C BiCMOS technologies and special integrated RF modules.
The following SiGe:C BiCMOS Technologies are available for MPW & Prototyping.

 

General Technology Description

SG25

SG25 is the basic 0.25 Ám CMOS process. It provides Nmos, Pmos, isolated Nmos and passive components such as poly resistors and MIM capacitors. In addition to the basic CMOS process different frontend options are offered.
The standard backend offers 3 thin metal layers a MIM layer and two TopMetal layers (TopMetal1 - fourth 2 Ám thick metal layer, TopMetal2 - fifth 3 Ám thick metal layer). Together with a high dieletric stack this enables increased RF passive component performance.

SG25H1

SG25H1 technology is a high-performance BiCMOS technology. The bipolar module H1 is based on SiGe:C npn-HBTs with up to 190GHz transient frequencies and up to 220GHz oscillation frequencies. The SG25H4 will replace the SG25H1 process starting in 2016. SG25H4 is offered <75% of SG25H1 price.

SG25H3

SG25H3 technology is a BiCMOS technology, too. The bipolar module H3 based on SiGe:C npn-HBT with up to 110GHz transient frequencies and up to 180GHz oscillation frequencies. Additionally, SiGe:C npn-HBTs with breakdown voltages (BVCE0) up to 7 V are offered.

SG25H3P

SG25H3P technology is a high-performance complementary BiCMOS technology. In addition to the bipolar module from SG25H3 a high-performance SiGe:C pnp-HBT with up to 90GHz transient frequencies and 120GHz oscillation frequencies is offered.

SG25H4

SG25H4 technology is a high-performance BiCMOS technology. The bipolar module based on SG25H1 high speed devices and SG25H3 high voltage devices. High-speed SiGe:C npn-HBTs have up to 200GHz transient frequencies and up to 220GHz oscillation frequencies. Additionally, SiGe:C npn-HBTs with breakdown voltages (BVCE0) up to 7 V are offered.

SGB25V

SG25V is a 21-mask BiCMOS process which combines a 0.25 Ám CMOS core with types of SiGe:C HBTs.

GD module (SGB25V)

GD module (SGB25V) adds a complementary LDMOS module to the SGB25V process (nLDMOS up to 22 V, pLDMOS up to -16 V breakdown voltage and an isolated nLDMOS device).

SG13S

SG13S technology has a very high bipolar performance with up to 240GHz transient frequencies and up to 330GHz oscillation frequencies. The process offers a 7-layer AI-BEOL, including a MIM capacitor. 5 thin metal layers are based on 130 nm design rules. Two TopMetal layers (TopMetal1 - 2 Ám thick metal layer, TopMetal2 - 3 Ám thick metal layer) are for high Q passives. This technology offers CMOS devices with 130 nm gate length and 1.2 V core voltage and high voltage CMOS devices with 3.3 V core voltage. Further digital IP is available.

SG13C

SG13C technology is an RF CMOS technology which includes all features of SG13S but no bipolar HBTs.

SG13G2

SG13G2 technology has a very high bipolar performance with up to 300GHz transient frequencies and up to 500GHz oscillation frequencies. The process offers a 7-layer AI-BEOL, including a MIM capacitor. 5 thin metal layer are based on 130 nm design rules. Two TopMetal layers (TopMetal1 - 2 Ám thick metal layer, TopMetal2 - 3 Ám thick metal layer) are for high Q passives. This technology offers CMOS devices with 130 nm gate length and 1.2 V core voltage and high voltage CMOS devices with 3.3 V core voltage.

RFMEMS

RFMEMS module is an additional option in SG13S and SG13G2 technologies which offers integrated capacitive RFMEMS switch devices for frequencies between 40GHz to 150GHz.

LBE

LBE module (Local Backside Etching) is offered in all technologies to remove silicon locally to improve passive performance.

BEOL (only)

BEOL (only) Backend of Line Runs are offered for testing of passive structures only. Produced are Metal1 and all layers above. These runs are offered either for 0.25 Ám BEOL layer stack (SG25) or 0.13 Ám layer stack (SG13). LBE can be ordered together with BEOL (only) runs.

SG25_PIC

SG25_PIC MPW run Silicon Photonic plus SG25 Backend of Line. These runs offering Photonic devices like Waveguides plus Waveguide implantations, a Ge Photo-diode and SG25 BEOL layer stack. LBE can be used as option within this run.

SG25H_EPIC

SG25H_EPIC technology is a high performance BiCMOS technology with integrated Silicon Photonic devices. It combines SG25H4 BiCMOS process and photonic devices from SG25_PIC.

TSV

TSV (Through Silicon Via) module is an additional option in SG25H3/H4. It offers TSV structures in 75 Ám thick wafer with a backside metalization.

Bumping

Bumping for Flip Chip assembling bumps. (Ni/Au, Ball size 80Ám)

 

Delivery

40 diced samples, E-test data including RF measurements. Exceptions are designs using RFMEMS switch module, TSV module and SG25_PIC. Here only 25 samples will be delivered by default. Original wafer thickness is 750 Ám. After back lapping sample thicknesses of 200 Ám and 300 Ám are available without additional costs.

Engineering Runs

An Engineering Run consists of a separate mask set and the delivery of 6 wafers. Additional wafers can be purchased upon request.

 
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