|XH035||The XH035 series is X-FAB’s 0.35 micrometre Modular Mixed-Signal Technology. Main target applications are standard cell, semi-custom and full custom designs for industrial, automotive and telecommunication products. Based on a single poly triple metal 0.35μm drawn gate length process for digital applications, it features core and process modules such as low Vt, low leakage, embedded non-volatile memory and high voltage options, as well as standard or thick fourth layer of metal, double poly and MIM capacitors and high resistance polysilicon. MOS and bipolar transistors are also available. World class low noise p-mos and n-mos transistors make this technology the first choice for applications requiring very low noise and high signal-to-noise ratios.|
DMOS transistors are available for multiple operating voltages up to 100V. The 45V DMOS transistors come with a 45 percent lower on-resistance which can reduce the chip area by up to 40 percent, resulting in significant cost savings.
The 3.3 V CMOS cores are compatible in design rules and transistor performance with state-of-the-art 0.35μm CMOS processes.
|NEW XH035_noble metal||An add-on option is available to XH035 technology that provides a noble metal finish layer on top of the CMOS passivation. This additional finish can be either Au- or Pt-terminated and is usable as electrode material for sensor applications. It is connected to the standard top (Al) metal by the use of W-through passivation vias. |
This option is available for MLM services. Specific design rules and requirements apply.
|XH018||The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology.|
Based upon the industrial standard single poly with up to six metal layers 0.18-micron drawn gate length Nwell process.
It is the industry’s first and only 0.18 micrometer technology to integrate high temperature (HT), high voltage (HV) and non-volatile memory (NVM) all in a single platform.
It is ideal for SoC applications in the automotive market such as control devices inside combustion engine compartments or electric engine housings with temperature range up to 175ºC, as well as embedded high-voltage applications in the communications, consumer and industrial market.
|XT018||The XT018 series is X-FAB’s 0.18-micron Modular High-voltage SOI CMOS Technology.|
It combines the benefit of SOI wafers with Deep Trench Isolation (DTI) and those of a state-of-the-art six metal layers 0.18-micron process.
High voltage support up to 200V combined with range of Non-Volatile-Memory options.
The XT018 platform is specifically designed for a next generation automotive, industrial and medical applications operating in the temperature range of -40 to 175 °C. The platform is ideal for consumer, medical, telecommunication infrastructure and industrial applications that need bidirectional isolation, such as PoE applications, ultrasound transmitter drivers, piezo actuators and capacitive-driven micromechanics.
|XS018||XS018 is X-FAB’s specialized process for fast image sensors.|
The optional available modules for 4 transistor cells, pinned photo diodes and the stitching capabilities make this technology ideal for large image sensor applications needing high frame rates as used for instance for medical and scientific X-ray cameras.
The 3.3V core module allows a low mask count designs.
The industrial standard single poly with up to six metal layers 0.18-micron drawn gate length N-well process can also be used for low power SOC application in the automotive, industrial and medical markets.
|XP018||The XP018 series is X-FAB’s 0.18 micron Modular CMOS High Performance Analog Mixed-Signal Technology. |
Based upon the industrial standard single poly with up to six metal layers 0.18-micron drawn gate length N-well process, integrated with high voltage and Non-Volatile-Memory modules, the platform is engineered for applications needing an integrated solution and cost efficient process for high performance ICs.
Targeted applications are switching applications, lightings, display, etc; operating in temperature range of -40 to 175 °C.
|XR013||The XR013 technology is a RF SOI (CMOS) 0.13µm generation designed to serve RF applications.|
High-resistive ‘trap-rich’ SOI substrate (>3 kΩ-cm). Low Ron*Coff switch NMOS transistor with minimum L = 0.22µm. Vertical parallel plate (VPP) capacitor and Metal-Insulator-Metal (MIM) capacitor.
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