The ISiPP50G platform co-integrates a wide variety of passive and active components to support a wide range of optical transceiver architectures at data rates of 25Gb/s or 50Gb/s. The offered integrated components include low-loss waveguides, efficient vertical grating or broadband edge couplers, high-speed silicon electro-optic modulators, high-speed silicon-germanium electro-absorption modulators and high-speed germanium waveguide photo-detectors. iSiPP50G offers state-of-the-art performance, design flexibility and superior CD and thickness control. It is a fixed process technology (130nm) with a validated device library.
|3 etch depths |
in 220nm Si:
220nm (193 nm litho)
|Gate oxide and|
|1 etch depth:|
full poly etch (160nm)
|Advanced grating couplers,|
|Ion implantation in Si||8 implants levels:|
4x n-type and
|Si carrier depletion,|
doped Si resistors, …
|Ge module||100% Ge(Si) RPCVD|
growth & 2x
|Ge Photodectors Ge(Si) EA|
to doped silicon
|Metal heater||Metal layer for heaters||Metal heaters|
|Deep trench||Deep trench|
to expose edge
imec Si-Photonics Passives+ technology is a subset of iSiPP50G technology.
BioPIX is imec’s silicon nitride (SiN) photonics platform which is particularly optimized for applications in the visible and near infra-red wavelengths. The platform is based on PECVD SiN-on-insulator 200mm wafers processed on 180nm process technology in a CMOS fab. This allows highly repeatable and low variability fabrication of integrated photonic devices. The technology has been validated through 6 early-access MPWs in the EU project PIX4life.
BioPIX is available in two different technology flavors:
The platform offers possibility of two depth levels for SiN etch to allow fabrication of components such as strip waveguide, rib waveguide, shallow and fully etched grating couplers etc. The platform allows selective removal of cladding from waveguides for micro-fluidic channels and sensing zones etc. The platform also offers two layers of metals for functions such as thermo-optic tuning, electrical inter-connects etc., and a layer for deep trench etch for devices such as edge couplers.
Designing for this platform is supported through the process-design-kits (PDK) for Synopsys and Luceda Photonics software. The PDK includes technology files for designing, design library of building block components (waveguides, grating couplers, MMIs, directional couplers etc.), and documentation describing the technology, design rules and library components.
|2 SiN flavors||2 SiN thicknesses:|
|2 flavors optimized for wavelengths 300nm – 1000nm|
|2 SiN patterning steps each||2 etch depths|
BioPIX150: 90nm / 150nm
BioPIX300: 150nm / 300nm
|Strip / rib waveguides, shallow etched grating couplers|
|Clad oxide removal||Exposure of waveguides for sensing by removing local clad SiO2||Micro-channels for evanescent sensing by waveguides.|
|Metal heater||TiN metal lines for resistive heating||Thermo-optic tuners, switches, modulators etc.|
|Metal interconnect||Al metal lines and pads for interconnects||Metal interconnects, probe-pads, bond-pads|
|Deep trench||Deep trench to expose edge coupler facets||Edge couplers|
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