imec GaN-IC

Smart power

GaN-IC Technology

Imec researchers have combined GaN-on-SOI technology with trench isolation for the monolithic integration of GaN-based devices. The aim has been to isolate the devices by etching a trench through GaN and Si into the SiO2 buried layer, and as so enable the monolithic integration of GaN circuits, such as half-bridges.


If you are new to the GaN-IC technology, you can benefit from  the tutorial slides in PDF format.


In addition, here you can find key electrical parameters for GaN-IC 650V.

imec GaN-IC Technology
Technology Characteristics
In this technology, a GaN layer is epitaxially grown on a 200mm SOI wafer (Si(100)/SiO2/Si(111)) using metal-organic chemical vapor deposition (MOCVD). The stack consists of an AlN nucleation layer, an (Al)GaN buffer layer, a GaN channel layer, an AlGaN barrier layer and a Mg-doped p-GaN layer. Delicate strain engineering is performed to control the stress built up in the wafer during growth, resulting in a GaN-on-SOI wafer with controlled warpage and good mechanical strength. Furthermore, e-mode p-GaN HEMTs can be processed and TiN/p-GaN stacks used for the gates.
Special features
– Integrate multiple transistors on a single IC using trench isolation.
– Save package cost by packaging one instead of multiple devices
– Reduce system parasitic inductance.
To use the full potential of the fast switching speed of GaN power devices, the drivers should be co-integrated to lower the parasitic inductance. Further functionality can be added through the low-voltage logic and analog switches, the high-ohmic and low-ohmic resistors and the integrated MIM-capacitors.
Application area
High power switching and power conversion: 200V and 650V
Design kits version
v.2.2.2 at 200V
v.2.0.1 at 650V
Front-end/back-end tools
Verification tools
DRC Calibre
The PDK includes process documentation, library devices, layout guidelines for custom design, verification and models.
– Low-ohmic and high-ohmic resistors
– Metal/oxide/metal capacitors
– Low voltage logic devices
Typical Turnaround time
Approximately 26 weeks since MPW submission deadline, it includes already 6 weeks of DRC iterations
Process options
Until M2/PASS for wire-bonding or until CuRDL/CuPillars to mount directly on PCB.
EUROPRACTICE webinar on imec GaN-IC