test-croco

GF SiGe 8XP
Technology characteristics
Core voltage: 1.2V / 2.5V
I/O voltage: 1.5 / 1.8V / 2.5V / 3.3V
TSV
Metal layers: 5 – 7 of Cu and AI
Thick Al and Cu “MA” add-on module for high Q inductors
Forward Bias, PIN and Schottky Barrier Diodes
High performance SiGe NPN transistors (fT/fmax 250/340GHz)
High breakdown fT= 78GHz, 3.2V BVceo
Temperature Range: -55°C to 125°C
Device offerings: SchottkyDiode, P+ poly resistors, Thin oxide NMOS varactor/ decoupling capacitor, Spiral inductors, Transmission lines, mmWave passive elements, eFuse, Triple-well NFETs, PIN Diode, Hyper abrupt (HA) varactor, MIM capacitor, Dual MIM (3 fF/μm2), High-RsRR poly resistor, TaNmetal KQ resistor, True triple well (T3) FET
Wafer size
12inch
Manufacturing location
Fab9 – Burlington, Vermont, USA
Deliverables
50 bare dies
Signoff tools
Cadence, Mentor Graphics
Foundational IPs
Standard cell libraries: GLOBALFOUNDRIES
GPIO : GLOBALFOUNDRIES
SRAM : ARM / GLOBALFOUNDRIES
The ARM IPs have to be requested directly at ARM via DesignStart portal
For GLOBALFOUNDRIES IPs contact Fraunhofer IIS
Dummy filling
To be done by the customer
MPW block size
9mm² with a min. edge length of 1mm, flexible aspect ratio
Turnaround time
ca. 6 months
mini@sic characteristics
Not supported
Bumping
Cu Pillar and SnAg
GF SiGe 8XP
Technology characteristics
Core voltage: 1.2V / 2.5V
I/O voltage: 1.5 / 1.8V / 2.5V / 3.3V
TSV
Metal layers: 5 – 7 of Cu and AI
Thick Al and Cu “MA” add-on module for high Q inductors
Forward Bias, PIN and Schottky Barrier Diodes
High performance SiGe NPN transistors (fT/fmax 250/340GHz)
High breakdown fT= 78GHz, 3.2V BVceo
Temperature Range: -55°C to 125°C
Device offerings: SchottkyDiode, P+ poly resistors, Thin oxide NMOS varactor/ decoupling capacitor, Spiral inductors, Transmission lines, mmWave passive elements, eFuse, Triple-well NFETs, PIN Diode, Hyper abrupt (HA) varactor, MIM capacitor, Dual MIM (3 fF/μm2), High-RsRR poly resistor, TaNmetal KQ resistor, True triple well (T3) FET
Wafer size
12inch
Manufacturing location
Fab9 – Burlington, Vermont, USA
Deliverables
50 bare dies
Signoff tools
Cadence, Mentor Graphics
Foundational IPs
Standard cell libraries: GLOBALFOUNDRIES
GPIO : GLOBALFOUNDRIES
SRAM : ARM / GLOBALFOUNDRIES
The ARM IPs have to be requested directly at ARM via DesignStart portal
For GLOBALFOUNDRIES IPs contact Fraunhofer IIS
Dummy filling
To be done by the customer
MPW block size
9mm² with a min. edge length of 1mm, flexible aspect ratio
Turnaround time
ca. 6 months
mini@sic characteristics
Not supported
Bumping
Cu Pillar and SnAg
GF SiGe 8XP
Technology characteristics
Core voltage: 1.2V / 2.5V
I/O voltage: 1.5 / 1.8V / 2.5V / 3.3V
TSV
Metal layers: 5 – 7 of Cu and AI
Thick Al and Cu “MA” add-on module for high Q inductors
Forward Bias, PIN and Schottky Barrier Diodes
High performance SiGe NPN transistors (fT/fmax 250/340GHz)
High breakdown fT= 78GHz, 3.2V BVceo
Temperature Range: -55°C to 125°C
Device offerings: SchottkyDiode, P+ poly resistors, Thin oxide NMOS varactor/ decoupling capacitor, Spiral inductors, Transmission lines, mmWave passive elements, eFuse, Triple-well NFETs, PIN Diode, Hyper abrupt (HA) varactor, MIM capacitor, Dual MIM (3 fF/μm2), High-RsRR poly resistor, TaNmetal KQ resistor, True triple well (T3) FET
Core voltage: 1.2V / 2.5V
I/O voltage: 1.5 / 1.8V / 2.5V / 3.3V
TSV
Metal layers: 5 – 7 of Cu and AI
Thick Al and Cu “MA” add-on module for high Q inductors
Forward Bias, PIN and Schottky Barrier Diodes
High performance SiGe NPN transistors (fT/fmax 250/340GHz)
High breakdown fT= 78GHz, 3.2V BVceo
Temperature Range: -55°C to 125°C
Device offerings: SchottkyDiode, P+ poly resistors, Thin oxide NMOS varactor/ decoupling capacitor, Spiral inductors, Transmission lines, mmWave passive elements, eFuse, Triple-well NFETs, PIN Diode, Hyper abrupt (HA) varactor, MIM capacitor, Dual MIM (3 fF/μm2), High-RsRR poly resistor, TaNmetal KQ resistor, True triple well (T3) FET
Core voltage: 1.2V / 2.5V
I/O voltage: 1.5 / 1.8V / 2.5V / 3.3V
TSV
Metal layers: 5 – 7 of Cu and AI
Thick Al and Cu “MA” add-on module for high Q inductors
Forward Bias, PIN and Schottky Barrier Diodes
High performance SiGe NPN transistors (fT/fmax 250/340GHz)
High breakdown fT= 78GHz, 3.2V BVceo
Temperature Range: -55°C to 125°C
Device offerings: SchottkyDiode, P+ poly resistors, Thin oxide NMOS varactor/ decoupling capacitor, Spiral inductors, Transmission lines, mmWave passive elements, eFuse, Triple-well NFETs, PIN Diode, Hyper abrupt (HA) varactor, MIM capacitor, Dual MIM (3 fF/μm2), High-RsRR poly resistor, TaNmetal KQ resistor, True triple well (T3) FET
Wafer size
12inch
Manufacturing location
Fab9 – Burlington, Vermont, USA
Deliverables
50 bare dies
Signoff tools
Cadence, Mentor Graphics
Foundational IPs
Standard cell libraries: GLOBALFOUNDRIES
GPIO : GLOBALFOUNDRIES
SRAM : ARM / GLOBALFOUNDRIES
The ARM IPs have to be requested directly at ARM via DesignStart portal
For GLOBALFOUNDRIES IPs contact Fraunhofer IIS
Dummy filling
To be done by the customer
MPW block size
9mm² with a min. edge length of 1mm, flexible aspect ratio
Turnaround time
ca. 6 months
mini@sic characteristics
Not supported
Bumping
Cu Pillar and SnAg