test-croco

GF SiGe 8XP
Technology characteristics
Core voltage: 1.2V / 2.5V
I/O voltage: 1.5 / 1.8V / 2.5V / 3.3V
TSV
Metal layers: 5 – 7 of Cu and AI
Thick Al and Cu “MA” add-on module for high Q inductors
Forward Bias, PIN and Schottky Barrier Diodes
High performance SiGe NPN transistors (fT/fmax 250/340GHz)
High breakdown fT= 78GHz, 3.2V BVceo
Temperature Range: -55°C to 125°C
Device offerings: SchottkyDiode, P+ poly resistors, Thin oxide NMOS varactor/ decoupling capacitor, Spiral inductors, Transmission lines, mmWave passive elements, eFuse, Triple-well NFETs, PIN Diode, Hyper abrupt (HA) varactor, MIM capacitor, Dual MIM (3 fF/μm2), High-RsRR poly resistor, TaNmetal KQ resistor, True triple well (T3) FET
Wafer size
12inch
Manufacturing location
Fab9 – Burlington, Vermont, USA
Deliverables
50 bare dies
Signoff tools
Cadence, Siemens EDA
Foundational IPs
Standard cell libraries: GLOBALFOUNDRIES
GPIO : GLOBALFOUNDRIES
SRAM : ARM / GLOBALFOUNDRIES
The ARM IPs have to be requested directly at ARM via DesignStart portal
For GLOBALFOUNDRIES IPs contact Fraunhofer IIS
Dummy filling
To be done by the customer
MPW block size
9mm² with a min. edge length of 1mm, flexible aspect ratio
Turnaround time
ca. 6 months
mini@sic characteristics
Not supported
Bumping
Cu Pillar and SnAg
GF SiGe 8XP
Technology characteristics
Core voltage: 1.2V / 2.5V
I/O voltage: 1.5 / 1.8V / 2.5V / 3.3V
TSV
Metal layers: 5 – 7 of Cu and AI
Thick Al and Cu “MA” add-on module for high Q inductors
Forward Bias, PIN and Schottky Barrier Diodes
High performance SiGe NPN transistors (fT/fmax 250/340GHz)
High breakdown fT= 78GHz, 3.2V BVceo
Temperature Range: -55°C to 125°C
Device offerings: SchottkyDiode, P+ poly resistors, Thin oxide NMOS varactor/ decoupling capacitor, Spiral inductors, Transmission lines, mmWave passive elements, eFuse, Triple-well NFETs, PIN Diode, Hyper abrupt (HA) varactor, MIM capacitor, Dual MIM (3 fF/μm2), High-RsRR poly resistor, TaNmetal KQ resistor, True triple well (T3) FET
Wafer size
12inch
Manufacturing location
Fab9 – Burlington, Vermont, USA
Deliverables
50 bare dies
Signoff tools
Cadence, Siemens EDA
Foundational IPs
Standard cell libraries: GLOBALFOUNDRIES
GPIO : GLOBALFOUNDRIES
SRAM : ARM / GLOBALFOUNDRIES
The ARM IPs have to be requested directly at ARM via DesignStart portal
For GLOBALFOUNDRIES IPs contact Fraunhofer IIS
Dummy filling
To be done by the customer
MPW block size
9mm² with a min. edge length of 1mm, flexible aspect ratio
Turnaround time
ca. 6 months
mini@sic characteristics
Not supported
Bumping
Cu Pillar and SnAg

45RFSOI takes advantage of a 45nm partially-depleted SOI server-class technology base that has been extensively evaluated for use in mmWave applications and in high volume production at multiple GF fabs since 2008. Today, this baseline process has RFcentric enablement, topped with device and technology additions, including thick copper and dielectric back-end-of-line (BEOL) features which enable 45RFSOI to handle the demanding performance requirements of 5G solutions.

GF 45RFSOI
Technology characteristics
High-resistivity substrate ≥7500 Ω-cm
Three BEOL STACK options: 7 or 8 Levels of Cu Wiring and Thick Al LD or LB
Operating junction temperature: -40°C to 125°C
VDD of 0.9 V or 1.0 V (thin oxide)
Two gate oxide thicknesses
High density / High Q MIMcap, High-value resistor
RF and mmWave offering: Inductors, Microstrip, Coplanar Waveguides, Passives
Fuse: eFuse
Wafer size
12inch
Manufacturing location
Fab10 – East Fishkill, New York, USA
Deliverables
50 dies for general MPW, 25 dies for mini@sic run
Signoff tools
Cadence, Siemens EDA
Foundational IPs
Standard cell libraries: ARM
GPIO : ARM
SRAM : N/A
The foundational IPs have to be requested directly at ARM via DesignStart portal
Dummy filling
To be done by the customer
MPW block size
9mm² with a min. edge length of 1mm, flexible aspect ratio
Turnaround time
ca. 5.5 months
mini@sic characteristics
Supported
Block size:1500µm x 1500µm (incl. Chipguardring)
BEOL stack: Option #18 (8LM_3Mx_1Cx_1Ux_2Ox_LD)
Interconnect: Inline Wirebond
Turnaround time: ca. 6 months
Bumping
Available only for general MPW (Cu Pillar and SnAg)
GF SiGe 8XP
Technology characteristics
Core voltage: 1.2V / 2.5V
I/O voltage: 1.5 / 1.8V / 2.5V / 3.3V
TSV
Metal layers: 5 – 7 of Cu and AI
Thick Al and Cu “MA” add-on module for high Q inductors
Forward Bias, PIN and Schottky Barrier Diodes
High performance SiGe NPN transistors (fT/fmax 250/340GHz)
High breakdown fT= 78GHz, 3.2V BVceo
Temperature Range: -55°C to 125°C
Device offerings: SchottkyDiode, P+ poly resistors, Thin oxide NMOS varactor/ decoupling capacitor, Spiral inductors, Transmission lines, mmWave passive elements, eFuse, Triple-well NFETs, PIN Diode, Hyper abrupt (HA) varactor, MIM capacitor, Dual MIM (3 fF/μm2), High-RsRR poly resistor, TaNmetal KQ resistor, True triple well (T3) FET
Wafer size
12inch
Manufacturing location
Fab9 – Burlington, Vermont, USA
Deliverables
50 bare dies
Signoff tools
Cadence, Siemens EDA
Foundational IPs
Standard cell libraries: GLOBALFOUNDRIES
GPIO : GLOBALFOUNDRIES
SRAM : ARM / GLOBALFOUNDRIES
The ARM IPs have to be requested directly at ARM via DesignStart portal
For GLOBALFOUNDRIES IPs contact Fraunhofer IIS
Dummy filling
To be done by the customer
MPW block size
9mm² with a min. edge length of 1mm, flexible aspect ratio
Turnaround time
ca. 6 months
mini@sic characteristics
Not supported
Bumping
Cu Pillar and SnAg
GF SiGe 8XP
Technology characteristics
Core voltage: 1.2V / 2.5V
I/O voltage: 1.5 / 1.8V / 2.5V / 3.3V
TSV
Metal layers: 5 – 7 of Cu and AI
Thick Al and Cu “MA” add-on module for high Q inductors
Forward Bias, PIN and Schottky Barrier Diodes
High performance SiGe NPN transistors (fT/fmax 250/340GHz)
High breakdown fT= 78GHz, 3.2V BVceo
Temperature Range: -55°C to 125°C
Device offerings: SchottkyDiode, P+ poly resistors, Thin oxide NMOS varactor/ decoupling capacitor, Spiral inductors, Transmission lines, mmWave passive elements, eFuse, Triple-well NFETs, PIN Diode, Hyper abrupt (HA) varactor, MIM capacitor, Dual MIM (3 fF/μm2), High-RsRR poly resistor, TaNmetal KQ resistor, True triple well (T3) FET
Wafer size
12inch
Manufacturing location
Fab9 – Burlington, Vermont, USA
Deliverables
50 bare dies
Signoff tools
Cadence, Siemens EDA
Foundational IPs
Standard cell libraries: GLOBALFOUNDRIES
GPIO : GLOBALFOUNDRIES
SRAM : ARM / GLOBALFOUNDRIES
The ARM IPs have to be requested directly at ARM via DesignStart portal
For GLOBALFOUNDRIES IPs contact Fraunhofer IIS
Dummy filling
To be done by the customer
MPW block size
9mm² with a min. edge length of 1mm, flexible aspect ratio
Turnaround time
ca. 6 months
mini@sic characteristics
Not supported
Bumping
Cu Pillar and SnAg
GF SiGe 8XP
Technology characteristics
Core voltage: 1.2V / 2.5V
I/O voltage: 1.5 / 1.8V / 2.5V / 3.3V
TSV
Metal layers: 5 – 7 of Cu and AI
Thick Al and Cu “MA” add-on module for high Q inductors
Forward Bias, PIN and Schottky Barrier Diodes
High performance SiGe NPN transistors (fT/fmax 250/340GHz)
High breakdown fT= 78GHz, 3.2V BVceo
Temperature Range: -55°C to 125°C
Device offerings: SchottkyDiode, P+ poly resistors, Thin oxide NMOS varactor/ decoupling capacitor, Spiral inductors, Transmission lines, mmWave passive elements, eFuse, Triple-well NFETs, PIN Diode, Hyper abrupt (HA) varactor, MIM capacitor, Dual MIM (3 fF/μm2), High-RsRR poly resistor, TaNmetal KQ resistor, True triple well (T3) FET
Core voltage: 1.2V / 2.5V
I/O voltage: 1.5 / 1.8V / 2.5V / 3.3V
TSV
Metal layers: 5 – 7 of Cu and AI
Thick Al and Cu “MA” add-on module for high Q inductors
Forward Bias, PIN and Schottky Barrier Diodes
High performance SiGe NPN transistors (fT/fmax 250/340GHz)
High breakdown fT= 78GHz, 3.2V BVceo
Temperature Range: -55°C to 125°C
Device offerings: SchottkyDiode, P+ poly resistors, Thin oxide NMOS varactor/ decoupling capacitor, Spiral inductors, Transmission lines, mmWave passive elements, eFuse, Triple-well NFETs, PIN Diode, Hyper abrupt (HA) varactor, MIM capacitor, Dual MIM (3 fF/μm2), High-RsRR poly resistor, TaNmetal KQ resistor, True triple well (T3) FET
Core voltage: 1.2V / 2.5V
I/O voltage: 1.5 / 1.8V / 2.5V / 3.3V
TSV
Metal layers: 5 – 7 of Cu and AI
Thick Al and Cu “MA” add-on module for high Q inductors
Forward Bias, PIN and Schottky Barrier Diodes
High performance SiGe NPN transistors (fT/fmax 250/340GHz)
High breakdown fT= 78GHz, 3.2V BVceo
Temperature Range: -55°C to 125°C
Device offerings: SchottkyDiode, P+ poly resistors, Thin oxide NMOS varactor/ decoupling capacitor, Spiral inductors, Transmission lines, mmWave passive elements, eFuse, Triple-well NFETs, PIN Diode, Hyper abrupt (HA) varactor, MIM capacitor, Dual MIM (3 fF/μm2), High-RsRR poly resistor, TaNmetal KQ resistor, True triple well (T3) FET
Wafer size
12inch
Manufacturing location
Fab9 – Burlington, Vermont, USA
Deliverables
50 bare dies
Signoff tools
Cadence, Siemens EDA
Foundational IPs
Standard cell libraries: GLOBALFOUNDRIES
GPIO : GLOBALFOUNDRIES
SRAM : ARM / GLOBALFOUNDRIES
The ARM IPs have to be requested directly at ARM via DesignStart portal
For GLOBALFOUNDRIES IPs contact Fraunhofer IIS
Dummy filling
To be done by the customer
MPW block size
9mm² with a min. edge length of 1mm, flexible aspect ratio
Turnaround time
ca. 6 months
mini@sic characteristics
Not supported
Bumping
Cu Pillar and SnAg