GLOBALFOUNDRIES

Technologies

GLOBALFOUNDRIES edit

DETAILS

GF’s SiGe 8XP technology drawn at 130nm features low noise figures, high linearity, gain, breakdown and operating voltages, together with simplified impedance matching and excellent thermal stability. Advanced SiGe heterojunction bipolar transistors (HBTs) provide superior low-current and high-frequency performance while enabling the technology to operate at high junction temperatures.

GF SiGe 8XP
Technology characteristics
Core voltage: 1.2V / 2.5V
I/O voltage: 1.5 / 1.8V / 2.5V / 3.3V
TSV
Metal layers: 5 – 7 of Cu and AI
Thick Al and Cu “MA” add-on module for high Q inductors
Forward Bias, PIN and Schottky Barrier Diodes
High performance SiGe NPN transistors (fT/fmax 250/340GHz)
High breakdown fT= 78GHz, 3.2V BVceo
Temperature Range: -55°C to 125°C
Device offerings: SchottkyDiode, P+ poly resistors, Thin oxide NMOS varactor/ decoupling capacitor, Spiral inductors, Transmission lines, mmWave passive elements, eFuse, Triple-well NFETs, PIN Diode, Hyper abrupt (HA) varactor, MIM capacitor, Dual MIM (3 fF/μm2), High-RsRR poly resistor, TaNmetal KQ resistor, True triple well (T3) FET
Wafer size
8inch
Manufacturing location
Fab9 – Burlington, Vermont, USA
Deliverables
45-50 Dies (depends on 3rd party packaging services)
Signoff tools
Cadence, Siemens EDA
Foundational IPs
Standard cell libraries: GLOBALFOUNDRIES
GPIO : GLOBALFOUNDRIES
SRAM : ARM / GLOBALFOUNDRIES
The ARM IPs have to be requested directly at ARM via DesignStart portal
For GLOBALFOUNDRIES IPs contact Fraunhofer IIS
Dummy filling
To be done by the customer
MPW block size
12mm²
Turnaround time
ca. 6 months
mini@sic characteristics
Supported only for Universities and Research Institutes
Block size: min. 2mm²
Bumping
Cu Pillar and SnAg

The GF 130BCDLite process is tailored for cost-effective mobile/consumer applications: DC-DC, AC-DC, PMIC, Wireless and Quick Charging.

GF 130BCDLite – Gen2
Technology characteristics
Core and I/O Voltage: 1.5V/5V/12-40V
8-12 Ω-cm p-type substrate (noise isolation)
Poly layers: 1, Metal layers: 4-8 of Cu
Top metal thickness: 30kA and/or 9kA
Recommended metal stack on MPW: 1P7M TM30K
Metal: Cu, AI(RDL)
Device offeringss: High gain MOSFETs with Regular and NativeVt, BJTs, Diodes, Single Mask MIM, Resistors, eFuse, Inductors, ESD, Pads.
RF Devices: MOSFETs, LDMOS, Capacitors and Diodes
Special devices: MTP, OTP, eFlash
Passivation: Single or Dual
Wafer size
12inch
Manufacturing location
Fab7 – Woodlands, Singapore
Deliverables
45-50 Dies (depends on 3rd party packaging services)
Signoff tools
Cadence, Synopsys, Siemens EDA
Foundational IPs
Standard cell libraries: ARM
GPIO : GLOBALFOUNDRIES
SRAM : ARM
The foundational IPs have to be requested directly at the IP vendor:
– ARM via DesignStart portal
– For GLOBALFOUNDRIES GPIO contact Fraunhofer IIS
Dummy filling
To be done by the customer
MPW block size
25mm²
Turnaround time
ca. 5 months
mini@sic characteristics
Supported only for Universities and Research Institutes
Block size: min. 4mm²
Bumping
Solder bump

Industry’s first 55BCDLite technology (300mm, Cu BEOL). 55BCDlite is built on top of 55LPx platform. It delivers optimal performance for mobile audio amplifiers and smart phone power solutions enabled by its industry leading lowest RdsOn versus BVdss breakdown voltage.

GF 55BCDLite
Technology characteristics
Core Voltage: 0.9V/1.2V
I/O Voltage: 1.8V/2.5V/3.3V
High Voltage: 5V/10/12V/20V/30V
-40C to 125C
4 – 9 copper metals
Minimum drawn gate length = 0.06μm
Twin or triple well CMOS technology on p-substrate
Core FETs: SLVTs, LVTs, SHVTs, HVTs and StdVTs
5V CMOS (gate oxide 25nm n/p) 5V Isolated Low Rdson EDMOS
8/10/12V Isolated Low Rdson EDMOS, 12V Regular EDMOS
Switching 20V EDMOS, Low TCR TaN Resistor, AVT FETs, FHRES
Legacy MIMCAP and inductor option, High Resistor options
Wafer size
12inch
Manufacturing location
Fab7 – Woodlands, Singapore
Deliverables
45-50 Dies (depends on 3rd party packaging services)
Signoff tools
Cadence, Siemens EDA
Foundational IPs
Standard cell libraries: GF
GPIO: GF
eFuse: GF
Dummy filling
To be done by the customer
MPW block size
12mm²
Turnaround time
ca. 6 months
mini@sic characteristics
Supported only for Universities and Research Institutes
Block size: min. 2mm²
Bumping
Cu Pillar and SnAg

45RFE is a 45 nm generation, SOI, CMOS technology that supports application-specific integrated circuit (ASIC) designs, SRAM, and custom logic designs.

Ground up mmWave technology based on 45RFSOI and incorporates key RF devices (RVT, ADNFET) with high ft and fmax. SOI transistors can be stacked, enables higher voltage and power handling. It provides additional RF benefits with reduced parasitics , higher Q and lower loss with Increased isolation and linearity with Higher efficiency antenna on chip.

GF 45RFE
Technology characteristics
Core Voltage: 1V
I/O Voltage: 2.5V
Hgate FETs, Low leakage digital FETs, ADNFET
Thick & Thin gate oxide FETs, Resistors, Inductors, and Diodes
Capacitors, Substrate HR + processing ~1.5K Ohm cm, ESDs
Two BEOL STACK options 8 Levels of Cu Wiring (including 2x 3um Cu wires and 2um Al)
Operating junction temperature range of -40°C to 125°C
VDD of 1.0 V (thin oxide), Shallow trench isolation (STI)
Electrically programmable fuse (eFUSE)
RF Features:
High and low density MIM capacitors
High-value resistor 1.5K Ohms/square, BEOL stacks – 8 level
ADFETs for RF power amplification
Wafer size
12inch
Manufacturing location
Fab8 – USA
Deliverables
45-50 Dies (depends on 3rd party packaging services)
Signoff tools
Cadence, Siemens EDA
Foundational IPs
Standard cell libraries: GF
GPIO: GF
eFuse: GF
Dummy filling
To be done by the customer
MPW block size
12mm²
Turnaround time
ca. 6 months
mini@sic characteristics
Supported only for Universities and Research Institutes
Block size: min. 1mm²
Bumping
Cu Pillar and SnAg

45RFSOI takes advantage of a 45nm partially-depleted SOI server-class technology base that has been extensively evaluated for use in mmWave applications and in high volume production at multiple GF fabs since 2008. Today, this baseline process has RFcentric enablement, topped with device and technology additions, including thick copper and dielectric back-end-of-line (BEOL) features which enable 45RFSOI to handle the demanding performance requirements of 5G solutions.

GF 45RFSOI
Technology characteristics
High-resistivity substrate ≥7500 Ω-cm
Three BEOL STACK options: 7 or 8 Levels of Cu Wiring and Thick Al LD or LB
Operating junction temperature: -40°C to 125°C
VDD of 0.9 V or 1.0 V (thin oxide)
Two gate oxide thicknesses
High density / High Q MIMcap, High-value resistor
RF and mmWave offering: Inductors, Microstrip, Coplanar Waveguides, Passives
Fuse: eFuse
Wafer size
12inch
Manufacturing location
FAB8 – USA
Deliverables
45-50 Dies (depends on 3rd party packaging services)
Signoff tools
Cadence, Siemens EDA
Foundational IPs
Standard cell libraries: ARM
GPIO : ARM
SRAM : N/A
The foundational IPs have to be requested directly at ARM via DesignStart portal
Dummy filling
To be done by the customer
MPW block size
12mm²
Turnaround time
ca. 5.5 months
mini@sic characteristics
Supported for universities and research institutes
Block size: min. 1mm2
Bumping
Available only for general MPW (Cu Pillar and SnAg)

45SPCLO is a 45 nm generation, SOI, CMOS technology that supports (ASIC) designs and custom logic designs. It offers power, area, and performance advantages and efficiency providing more data per watt per fibre per Laser. Monolithic integration of RF, digital and Si-Photonic circuits with higher energy efficiency and higher modulation speed. Ideal for applications like Automotive Lidar, IoT, Cloud, Frictionless Networking, Virtualization and Hierarchical AI.

GF 45 SPCLO Silicon-Photonics
Technology characteristics
CMOS technology substrate resistivity is in the range of 9-18 ohm-cm
Core Voltages: 0.9V, 1V, IO Voltages: 1.5V, 1.8V
1.12 nm thin gate oxide for 0.9 V
2.5 nm thick gate oxide for 1.5 V and 1.8 V
Mini. lithographic image of 40 nm (gate only)
Operating junction temperature: -40°C to 125°C
One BEOL STACK options: 9LM Metallization stack
Seven levels of all-copper global metal
1x, 2x, and 8x thick wires at relaxed pitches
Low-K and TEOS/FTEOS Inter Level Dielectrics
Planarized passivation and interlevel dielectrics
High-value resistor 1.5K Ohms/square
Photonic offering
C-band (1550 nm) coherent transceivers modules
O-band (1310 nm) direct detect transceivers
Photonic waveguide
Polarization splitter & rotator, modulators, detectors
Phase shifter, connection options (Polymer bundle or Fiber Butt)
Vertical grating incoupler: iograt
Device offering
Regular Vt, floating-body FETs
Ultrahigh Vt, floating-body FETs
Analog, body-contacted FETs
Thick-oxide, body-contacted FETs
Precision resistors,Thick-oxide decoupling capacitor
Efuse, Ge EPI Photo diode, Nitride wave guide in MOL
Wafer size
12inch
Manufacturing location
Fab8 – Malta, New York, USA
Deliverables
45-50 Dies (depends on 3rd party packaging services)
Signoff tools
Cadence, Synopsys, Siemens EDA
Dummy filling
By customer
MPW block size
25mm² with fix dimensions of 5mm x 5mm
MPW Turnaround time
5-6 months
Mini@sic characteristics
Supported
Block size: 5mm x 2.455mm or 2.455mm x 5mm (Pre-Shrink die size)
Bumping
Upon request

The GLOBALFOUNDRIES 28SLPe process technology platform is optimized for power, performance and die cost. 28SLPe utilizes optical 0.9x shrink of designs drawn at 32nm dimensions.

GF 28SLPe
Technology characteristics
Core voltage:1V
I/O voltage:1.5V/1.8V
1 poly and 6 – 11 levels of all Copper metal, plus Aluminum top layer metal
3 μm thickness copper layer for Inductors
Temperature Range: -40°C to 125°C
Vt Options: SLVt, LVt, RVt, HVt
Device offerings: Standard FETs, Zero-Vt NFETs, BJTs, eFuse
Resisitors:N+,P+ diffusion and N+,P+ polysilicon silicided,Nwell
N+ diffusion and p+ polysilicon OP,High-precision p+ polysilicon OP
Capacitors:Thin, Medium (EG) oxide NCAP, PCAP, VNCAP or APMOM
Different devices available for eFlash designs
Recommended Metal Stack on MPW
Option #2 (6U1x_2T8x_LB)
Wafer size
12inch
Manufacturing location
Fab1 – Dresden, Germany
Deliverables
45-50 Dies (depends on 3rd party packaging services)
Signoff tools
Cadence, Synopsys, Siemens EDA
Foundational IPs
Standard cell libraries: ARM
GPIO : Aragio
SRAM : ARM
The foundational IPs have to be requested directly at the IP vendor:
– ARM via DesignStart portal
– For Aragio GPIO contact Jennifer Blakeman
Dummy filling
To be done by the customer
MPW block size
9mm² with a min. edge length of 1mm, flexible aspect ratio
Turnaround time
ca. 4.5 months
mini@sic characteristics
Supported only for Universities and Research Institutes
Block size: min. 1mm² with a min. edge length of 1mm, flexible aspect ratio
Bumping
Cu Pillar and SnAg

GLOBALFOUNDRIES 22nm FD-SOI transistor technology delivers FinFET-like performance and energy-efficiency, including up to 70% lower power vs. 28nm. The simultaneous high Ft /high Fmax, high self gain and high current efficiency of 22FDX enables efficient, ultra low power analog/RF/mmWave designs. The process offers reference flow for back-gate biasing and RF BEOL with ultra thick metal stacks. The eMRAM module supports fully integrated, versatile memory for storage and compute for IoT and MCU.

GF 22FDX
Technology characteristics
Non-shrink process
Core voltage: 0.8V
I/O voltage: 1.2V/1.5V/1.8V, LDMOS @ 3.3V/5V/6.5V
1 poly and 6 – 10 levels of all copper metal, plus thick aluminum top layer metal
6 Vt options: eLVt, SLVt, LVt, RVt, HVt, UHVt
Qualified for Automotive Grade 1 (-40°C to 150°C)
Device offerings: Standard FETs, Diodes, BJTs, Passives (Resistors, AP/SP MOM, eFuse, Varactor, Parasitic Caps), SRAM (ULL, HD, SP, DP), ESD
RF/mmWave support: FETs, Resistor, Inductor, Varactor, APMOM, Tx Line
Special offering: eMRAM
Wafer size
12inch
Manufacturing location
Fab1 – Dresden, Germany
Deliverables
45-50 Dies (depends on 3rd party packaging services)
Signoff tools
Cadence, Synopsys, Siemens EDA
Foundational IPs
Standard cell libraries: Synopsys
GPIO : Synopsys
SRAM : Synopsys
The foundational IPs have to be requested directly at Synopsys via DesignWare IP portal
Double patterning and Dummy filling
To be done by the customer
MPW block size
9mm² with a min. edge length of 1mm, flexible aspect ratio
Turnaround time
ca. 3.5 months
mini@sic characteristics
Supported only for Universities and Research Institutes
Block size: min. 1mm² with a min. edge length of 1mm, flexible aspect ratio
Bumping
Cu Pillar and SnAg

The 12nm GLOBALFOUNDRIES 12LP+ FinFET process technology platform is ideal for high-performance, power-efficient SoCs in demanding, high-volume applications. 3D FinFET transistor technology provides best-in-class performance and power with significant cost advantages from 12nm area scaling. The 12LP+ technology can provide up to 20% higher device performance and 36% lower total power compared to the 12LP technology.

GF 12LP+
Technology characteristics
Based on 14LPP technology
Dual STI
Core voltage: 0.8V
I/O voltage: 1.2V / 1.35V / 1.5V / 1.8V
BEOL Stack options: 8ML / 9ML / 10ML / 11ML / 13ML
SLVT, LVT, RVT, HVT, DDB, SDB, Single Fin Logic
Device offerings: ESD diodes, vertical BJT, VNCAP, Standard MIM, Adv MIM, Inductors, Precision MOL Resistor, eFuse
Wafer size
12inch
Manufacturing location
Fab8 – Malta, New York, USA
Deliverables
45-50 Dies (depends on 3rd party packaging services)
Signoff tools
Cadence, Synopsys, Siemens EDA
Foundational IPs
Standard cell libraries: ARM
GPIO : ARM
SRAM : ARM
The foundational IPs have to be requested directly at the IP vendor ARM via DesignStart portal
Double patterning and Dummy filling
To be done by the customer
MPW block size
9mm² with a min. edge length of 1mm, flexible aspect ratio
Turnaround time
ca. 5.5 months
mini@sic characteristics
Supported only for Universities and Research Institutes
Block size: min. 1mm² with a min. edge length of 1mm, flexible aspect ratio
Bumping
Cu Pillar and SnAg