Prototyping & Fabrication Services

EM MICROELECTRONIC

Technologies

EM Microelectronic

Europractice users can get access to EM Microelectronic’s 0.11µm ALP11 Logic 3v3 technology.

EM Microelectronic 0.11µm ALP11 Logic 3v3
Technology characteristics
Met. layers: 5 / 6.
Minimum Gate length: 120nm [drawn]
Dual Gate Oxides: ThinGOX [1.50V typ] and DualGOX [3.30V typ]
FEOL isolation: Non Epi or p-Epi substrate, STI [Shallow trench isolation]
Typical Supply voltage: 1.5V & 3.3V
Special features
EKV models with parameters for near/sub Vth operations
Digital cell library optimized for Low Power/Low Voltage
I/O pads library with low leakage ESD protections
Application area
Ultra-Low Power, Ultra-Low Voltage
Analog Designs (low leakage, low noise, pairing)
Mixed signal (250kGates/mm2)
Low current (nA bias), Low voltage (down to 0.4V)
Design kits version
1.5 (Feb-2026)
Frontend Backend tools
Cadence IC 25.1
Simulation tools
Spectre (Cadence)
Primesim XA (Synopsys)
Verification tools
PVS (Cadence)
Parasitics extraction tools
Quantus (Cadence)
Place route tools
Innovus (Cadence) or Fusion Compiler (Synopsys)
Turnaround Time
12-15 weeks from MPW run deadline to packaged parts