EUROPRACTICE offers access to the various 200mm Silicon Photonics SOI platforms offered by CORNERSTONE.
The open source, license free rapid prototyping platform offers unparalleled flexibility in its MPW runs, with the option to customize certain steps.
Passive SOI calls include 2/3 etch depths and optional TiN based thermal phase shifters, whilst active SOI calls also include carrier based optical modulators. SiN calls offer a single etch process and optional TiN based thermal phase shifters. The suspended-Si platform is based on 500 nm SOI and undercuts the BOX layer to extend the Si waveguide transparency up to ~8 µm. The Ge-on-Si platform further extends the waveguide transparency up to ~14 µm.
Unlike many other rapid prototyping services, CORNERSTONE utilizes DUV lithography, but also offers the unique capability to pattern certain layers using high resolution e-beam lithography.
CORNERSTONE Si-Photonics 220 nm SOI Passives | |
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Highlights | Ability to customize certain steps Optional use of e-beam lithography for high resolution layers Open source PDK available No license required Rapid turn-around Option for design consultancy |
Technology Characteristics | 2 Si etch depths: 70 nm & 220 nm TiN based thermal phase shifters Option for no cladding if no heaters are required |
Design Tools | Luceda Photonics’ IPKISS platform |
Application | Datacoms, telecoms, LIDAR |
CORNERSTONE Si-Photonics 220 nm SOI Actives | |
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Highlights | Ability to customize certain steps Optional use of e-beam lithography for high resolution layers Open source PDK available No license required Option for design consultancy |
Technology Characteristics | High resistivity handle wafer (750 ohm.cm) 3 Si etch depths: 70 nm, 120 nm & 220 nm 4 implantation levels for carrier based modulators 1 metal layer for ohmic contacts |
Design Tools | Luceda Photonics’ IPKISS platform |
Application | Datacoms, telecoms, LIDAR |
CORNERSTONE Si-Photonics 340 nm SOI Passives | |
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Highlights | Lower loss platform Ability to customize certain steps Optional use of e-beam lithography for high resolution layers Open source PDK available No license required Rapid turn-around Option for design consultancy |
Technology Characteristics | 2 Si etch depths: 140 nm & 340 nm TiN based thermal phase shifters Option for no cladding if no heaters are required |
Design Tools | Luceda Photonics’ IPKISS platform |
Application | Datacoms, telecoms, quantum photonics, LIDAR
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CORNERSTONE Si-Photonics 500 nm SOI Passives | |
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Highlights | Ability to support mid-IR wavelengths Low loss platform Ability to customize certain steps Optional use of e-beam lithography for high resolution layers Open source PDK available No license required Rapid turn-around Option for design consultancy |
Technology Characteristics | 2 Si etch depths: 160 nm & 300 nm TiN based thermal phase shifters Option for no cladding if no heaters are required |
Design Tools | Luceda Photonics’ IPKISS platform |
Application | Mid-IR applications including sensing, datacoms, telecoms, quantum photonics |
CORNERSTONE SiN-Photonics | |
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Highlights | Ability to support mid-IR wavelengths Low loss platform Ability to customize certain steps Optional use of e-beam lithography for high resolution layers Open source PDK available No license required Rapid turn-around Option for design consultancy |
Technology Characteristics | 300 nm LPCVD SiN layer 3 μm BOX 300 nm SiN etch depth TiN based thermal phase shifters Option for no cladding if no heaters are required |
Design Tools | Luceda Photonics’ IPKISS platform |
Application | Applications include sensing, datacoms, telecoms, quantum photonics, LiDAR
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CORNERSTONE Suspended-Si | |
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Highlights | Ability to support mid-IR wavelengths up to ~8 µm Ability to customize certain steps Optional use of e-beam lithography for high resolution layers Open source PDK available No license required Rapid turn-around Option for design consultancy |
Technology Characteristics | 500 nm SOI 3 μm BOX 500 nm full Si etch depth BOX layer locally removed underneath suspended waveguides by HF etching |
Design Tools | Luceda Photonics’ IPKISS platform |
Application | Applications are centred around gas and chemical sensing
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CORNERSTONE Ge-on-Si | |
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Highlights | Ability to support mid-IR wavelengths up to ~14 µm Ability to customize certain steps Open source PDK available No license required Rapid turn-around Option for design consultancy |
Technology Characteristics | 3 µm Ge waveguide layer 1.8 µm Ge partial etch depth Edge coupling possible using diced waveguide facets |
Design Tools | Luceda Photonics’ IPKISS platform |
Application | Applications are centred around gas and chemical sensing
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