AMF

Technical characteristics:

• Silicon-on-insulator, 220-nm top Si film, 2000-nm buried oxide (BOX)
• High resistivity handle wafer (>750 ohm-cm)
• 193-nm deep UV lithography for waveguides, enabling features down to approximately 140 nm
• Two partial etches and one full etch of the top silicon
• 6 implants for optical modulators (P++, P+, P, N++, N+, N)
• Germanium deposition and implanting for photodetectors
• Two metal levels, no planarization
• Front side oxide etch to selectively expose waveguides, e.g. for sensing applications
• Deep trench with etched facets for edge coupling
• Supports design and fabrication of a range of components and systems consisting of:

     – modulators

     – detectors

     – waveguides (strip or ridge)

     – gratings for fiber coupling

     – deep trench and nano-tapers for edge coupling

     – multiplexers (diffraction or arrayed waveguide) and filters (resonators, Bragg gratings)

     – ring and disk resonators.

• Frontend Backend tools: Siemens EDA Pyxis and Luceda IPKISS-Tanner L-Edit