We are currently working on the CEA-Leti offer.
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Pioneering silicon photonics for more than 15 years, CEA-Leti has designed a technology toolbox featuring state-of-the-art performance for communication, computing and optical sensing.
CEA-Leti’s versatile Si-SiN photonics platform offers a broad range of processes on 300 mm wafers that leverage world-class pre-industrialization equipment. CEA-Leti’s fabrication platform enables large-scale integration of active and passive devices in a flexible CMOS compatible process.
CEA-Leti Si-220 Passive Photonics platform. | |
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Technology characteristics | Main features: 300 mm high uniformity SOI substrate with 220 nm Si Metal heater One-level metal interconnect Deep trench for edge coupler Available option: Open 3D Post-processes: UBM, Bumps & µ-Bumps Device library including: 1D & 2D grating couplers Waveguides (strip, rib, deep rib) with or without heater Bend waveguides (90°, 45°, s-) Transitions (singlemode to multimode) Directional couplers (50%, 90%, 98%) MMI (1×2, 2×2) Racetrack resonator |
Application area | Communication: Telecom, Datacom, 5G infrastructures, quantum cryptography for cybersecurity
Computing: Computer communication for High Performance Computing (HPC), quantum computing and neuromorphic computing for AI
Optical sensing: Gas sensing, structural health monitoring and 3D sensing such as LIDAR |
Frontend/backend tools | Cadence IC 6.1.7 (DK version 2019.4 – Mar.-20)
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Simulation tools | Eldo (Siemens EDA)
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Verification tools | Calibre (Siemens EDA) |
CEA-Leti Si-310 Active and Passive Photonics platform. | |
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Technology characteristics | Main features: 300 mm SOI substrate with 310 nm Si SiN layer 2μm buried oxide Selective Ge epitaxy 6 implant levels for p-type and n-type for modulators and doped Si heaters 3 silicon patterning steps for Si heights of 0, 65, 165 and 310 nm (193nm immersion lithography) Silicide modulator contacts Metal heater 2 metal layers Passive structures: 1D & 2D Grating couplers Shallow, deep rib and strip waveguides & bends Active structures: High speed Photodetectors High speed Modulators High performance building blocks: Fixed cells, Parametrised Cells and Black boxes Devices operating at O-Band and C-Band Mature device library in a Process Design Kit (PDK), compatible with conventional CAD tools Available options: Optical edge coupler Open 3D Post-processes: UBM, Bumps & µ-Bumps |
Application area | Communication: Telecom, Datacom, 5G infrastructures, quantum cryptography for cybersecurity
Computing: Computer communication for High Performance Computing (HPC), quantum computing and neuromorphic computing for AI
Optical sensing: gas sensing, structural health monitoring and 3D sensing such as LIDAR |
Frontend/backend tools | Cadence IC 6.1.7 (DK version 2019.4 – Mar.-20) Synopsys Opto Designer 2019.03 (DK version 2019.03_10.4 – Jun.-20) Tanner S-Edit/L-Edit 2020.1 update 5 |
Simulation tools | Eldo (Siemens EDA)
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Verification tools | Calibre (Siemens EDA) |
CEA-Leti’s Ultra-Low Loss SiN photonics platform is based on a high quality LPCVD Si3N4 layer. This platform is serving energy-efficient nonlinear photonics and quantum optics. This technology shows very high cross-wafer device performance uniformities, low thermal susceptibility, and high power damage thresholds.
CEA-Leti SiN-Photonics IC Si3N4-800 | |
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Technology characteristics | 800nm High Quality LPCVD Si3N4
200nm standard smallest feature size
Deep trench for edge coupler |
Application area | Communication: ground and space communication, quantum cryptography for cybersecurity Computing: quantum computing Optical sensing: biosensing, biomicroscopy and 3D sensing such as LIDAR
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Frontend/backend tools | Cadence IC 6.1.7 (DK version 2019.4 – Mar.-20)
|
Simulation tools | Eldo (Siemens EDA) |
Verification tools | Calibre (Siemens EDA) |
