COMPOUND SEMICONDUCTORS

GaN, SiC, GaAs, and SiGe

Compound Semiconductors

EUROPRACTICE PORTFOLIO

Compound semiconductors are materials formed by combining elements from different groups of the periodic table, harnessing the unique properties of their constituent elements.With EUROPRACTICE, you can access compound semiconductors such as SiC (Silicon Carbide), GaAs (Gallium Arsenide), GaN (Gallium Nitride), and SiGe (Silicon Germanium) of leading European foundries.

 

GaN technology offers advantages such as high power density, fast switching speeds, and excellent thermal conductivity, making it suitable for applications like electric vehicles, renewable energy systems, and telecommunications.

 

SiC technology, on the other hand, excels in high-temperature and high-voltage environments, making it ideal for power supplies, electric grids, and aerospace applications, whereas GaAs technology caters to high-frequency and high-speed applications, finding use in wireless communication systems and radar.

 

Last but not least, SiGe is known for its compatibility with silicon technology and its applications in the higher GHz bands, for instance, for broadband telecommunications, radar, imaging and sensor applications.

COMPOUND SEMICONDUCTOR FOUNDRIES

TECHNOLOGY OVERVIEW

Foundry
Technology
Fraunhofer IISB
Fraunhofer 2 µm SiC CMOS
IHP
IHP SiGe technologies
imec
• imec GaN-IC 200V
• imec GaN-IC 650V
UMS
• UMS GH25 0.25μm GaN HEMT
• UMS GH15 0.15μm GaN HEMT
• UMS PH10 GaAs pHEMT