09 Apr X-FAB XT018 – St. Petersburg Polytechnic University, Russia
A high-temperature low-power delta-sigma ADC
Integrated Circuits Design Center, Institute of Physics, Nanotechnology and Telecommunications, Peter the Great St. Petersburg Polytechnic University, Saint Petersburg, Russia
Contacts
Prof. Dr. Alexander S. Korotkov, Dr. Dmitry V. Morozov, Dr. Mikhail M. Pilipko, Dr. Mikhail S. Yenuchenko
korotkov@spbstu.ru
Technology
X-FAB XT018 0.18µm SOI CMOS
Die Size
3000µm x 900µm
Design tools
Cadence Virtuoso, Calibre Siemens EDA, Cadence Encounter
Description
Development of high-temperature electronic devices is an important problem. Currently, analog-to-digital converters (ADCs) based on delta-sigma modulators are widely used. Such ADCs have low power consumption with a sufficient number of output bits.
The high-temperature low-power delta-sigma ADC consists of two parts. The first one is a switched-capacitor low-pass filter and a delta-sigma modulator. The second part is a digital filter for decimation of the modulator output. The ADC is designed for 10 MHz clock frequency and a passband of 100 kHz. The X-FAB SOI CMOS technology is employed.
The ADC provides 11-bit effective resolution and consumes 37 mW from 5 V power supply. The 5th order low-pass filter has a balanced structure. The 2nd order delta-sigma modulator utilizes a 2-bit quantizer. The digital filter decimates the output code of the modulator by 48 times.
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