GLOBALFOUNDRIES

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Technologies

[/vc_column_text][vc_empty_space][vc_single_image image=”16029″ img_size=”medium” onclick=”custom_link” img_link_target=”_blank” qode_css_animation=”” link=”https://www.globalfoundries.com/” css=”.vc_custom_1591958737486{margin-bottom: 24px !important;}”][vc_empty_space height=”16px”][vc_column_text]EUROPRACTICE provides access to the following GLOBALFOUNDRIES technologies.[/vc_column_text][vc_empty_space][/vc_column][/vc_row][vc_row css_animation=”” row_type=”row” use_row_as_full_screen_section=”no” type=”full_width” angled_section=”no” text_align=”left” background_image_as_pattern=”without_pattern”][vc_column][vc_table allow_html=”1″][borders_all;align-left;11px;b]GF%20SiGe%208XP%3Cbr%20%2F%3E%3Cfont%20color%3D%22red%22%3ENEW%3C%2Ffont%3E,[borders_all;align-left;11px]GF%E2%80%99s%20SiGe%208XP%20technology%20drawn%20at%20130nm%20features%20low%20noise%20figures%2C%20high%20linearity%2C%0Again%2C%20breakdown%20and%20operating%20voltages%2C%20together%20with%20simplified%20impedance%20matching%0Aand%20excellent%20thermal%20stability.%20Advanced%20SiGe%20heterojunction%20bipolar%20transistors%0A(HBTs)%20provide%20superior%20low-current%20and%20high-frequency%20performance%20while%20enabling%0Athe%20technology%20to%20operate%20at%20high%20junction%20temperatures.|[borders_all;align-left;11px;b]GF%20130LP,[borders_all;align-left;11px]The%20comprehensive%2C%20highly-configurable%20and%20production-proven%20130nm%20Low%20Power%20process%20enables%20integration%20of%20logic%2C%20RF%2C%20analog%20and%20non-volatile%20memory%20to%20provide%20a%20cost%20effective%20solution.%20GLOBALFOUNDRIES%20is%20also%20the%20first%20foundry%20to%20offer%20a%20130%20nm%20EEPROM%20solution.%20%20This%20process%20flavour%20offers%201.5%20V%20(Core)%20and%203.3%20V%20(I%2FO)%20solutions%2C%20including%202%20core%20device%20Vt%E2%80%99s%20and%20plug-in%20modules%20for%20mixed-signal%2C%20high%20voltage%20and%20RF.%20The%20other%20features%20include%20high%20endurance%20and%20low%20power%20EEPROM%20module%2C%20twin%20retrograde%20wells%20on%20P-substrate%2C%20MIM%20capacitor%2C%20eFuse%20fuse%2Fmacro%2C%20high%20quality%20passives%2C%20diodes%20and%20inductors.|[borders_all;align-left;11px;b]GF%20130BCDLite,[borders_all;align-left;11px]The%20GF%20130BCDLite%20process%20is%20tailored%20for%20cost-effective%20mobile%2Fconsumer%20applications%3A%20DC-DC%2C%20AC-DC%2C%20PMIC%2C%20Wireless%20and%20Quick%20Charging.%20The%20process%20offers%205V%20CMOS%20baseline%20with%201.5V%20LP%20CMOS%2C%20N-epi%20and%20junction%20isolation%2C%20high-performance%20power%20and%20high-voltage%20transistors%2C%20HRES%2C%20Zener%20diode%2C%20MIM%20and%20MOM%20capacitors.%20The%20Isolated%205V%20to%2040V%20Low%20Rsp%20power%20devices%20offer%20optimal%20trade-off%20between%20performance%20and%20cost.%20The%20eFlash%20has%20an%20endurance%20%3E10k.|[borders_all;align-left;11px;b]GF%2090WG%20Si-Photonics%3Cbr%20%2F%3E%3Cfont%20color%3D%22red%22%3ENEW%3C%2Ffont%3E,[borders_all;align-left;11px]This%2090nm%20silicon%20photonics%20technology%20features%20best-in-class%20performance%20in%20key%20parameters%2C%0Aincluding%20SOI%20waveguide%20loss%2C%20undercut%20thermal%20phase%20shifter%2C%20input%2Foutput%0Asingle%20mode%20fiber%20fiber-to-chip%20coupling%20loss%20and%20optical%20return%20loss.%20Moreover%2C%20it%20has%0AMach-Zehnder%20Interferometer%20(MZI)%20and%20photodiode%20bandwidth.%20You%20can%20find%20more%20information%20on%20%3Ca%20href%3D%22https%3A%2F%2Feuropractice-ic.com%2Fmpw-prototyping%2Fsiphotonics%2Fglobalfoundries%2F%22%3E%3Cb%3EGLOBALFOUNDRIES%20Si-Photonics%20here%3C%2Fb%3E%3C%2Fa%3E.|[borders_all;align-left;11px;b]GF%2055LPe,[borders_all;align-left;11px]The%20GLOBALFOUNDRIES%2055nm%20Low%20Power%20enhanced%20process%20is%20the%20base%20platform%20in%2055nm%20node%2C%20offering%20multiple%20Vt%20options%20such%20as%20LVt%2C%20RVt%20and%20Hvt%2C%20operating%20at%20a%20core%20Vdd%20of%201.2V.%20The%20process%20offers%20several%20resistors%2C%20APMOM%2C%20MIM%20%26%20MOS%20Caps%2C%205V%20EDMOS%20and%20eFuse.|[borders_all;align-left;11px;b]GF%2055LPe-RF,[borders_all;align-left;11px]Built%20on%20the%20company%E2%80%99s%20low%20power%20enhanced%20(LPe)%20platform%2C%20the%2055nm%20RFCMOS%20technology%20combines%20the%20benefits%20of%20a%20rich%20baseline%20logic%20technology%20and%20IP%20ecosystem%20with%20world-class%20RF%20features%20and%20PDKs%2C%20enabling%20a%20seamless%20transition%20to%20%20digital%20logic%20SoCs%20with%20higher%20levels%20of%20RF%20integration.%20Using%20a%20multi-Vt%20baseline%20logic%20process%20the%2055nm%20LPe-RF%20technology%20adds%20RF-specific%20features%20such%20as%20Deep%20n-well%20devices%2C%20LDMOS%2FEDMOS%20FETs%2C%20Parasitic%20bipolar%20devices%2C%20MOS%2FHA%20varactors%2C%20Precision%20resistors%2C%20MIMcaps%2FMOMcaps%2C%20Inductors%20and%20Thick%20metals.|[borders_all;align-left;11px;b]GF%2055LPx-NVM,[borders_all;align-left;11px]Built%20on%20the%2055nm%20Low%20Power%20extended%20(LPx)%20base%20platform%20with%201.2V%20and%202.5V%20CMOS%20logic%2C%20the%2055LPx-NVM%20offers%20consumer%20and%20automotive%20grade%20embedded%20NVM%20for%20MCU%2C%20IoT%2C%20NFC%2C%20Bluetooth%20and%20WiFi%20applications.%20This%20module%20offers%20high%20density%20eFlash%20and%20HV%20devices%20in%20addition%20to%20the%20base%20platform%20features%20such%20as%20DG%20I%2FO%2C%20multi-Vt%20transistors%2C%20SRAM%2C%20DNwell%20and%20MIMCaps.|[borders_all;align-left;11px;b]GF%2045RFSOI%3Cbr%20%2F%3E%20%3Cfont%20color%3D%22red%22%3ENEW%3C%2Ffont%3E,[borders_all;align-left;11px]45RFSOI%20takes%20advantage%20of%20a%2045nm%20partially-depleted%20SOI%0Aserver-class%20technology%20base%20that%20has%20been%20extensively%20evaluated%0Afor%20use%20in%20mmWave%20applications%20and%20in%20high%20volume%20production%0Aat%20multiple%20GF%20fabs%20since%202008.%20Today%2C%20this%20baseline%20process%0Ahas%20RF-centric%20enablement%2C%20topped%20with%20device%20and%20technology%0Aadditions%2C%20including%20thick%20copper%20and%20dielectric%20back-end-ofline%0A(BEOL)%20features%20which%20enable%2045RFSOI%20to%20handle%20the%20demanding%0Aperformance%20requirements%20of%205G%20solutions.|[borders_all;align-left;11px;b]GF%2040LP,[borders_all;align-left;11px]GLOBALFOUNDRIES%2040LP%20process%20technology%20platform%20is%20ideal%20for%20%20power-%20and%20price-sensitive%20mobile%20and%20wireless%20applications%20with%20flexible%20mixed-technology%20options%20for%20RF%2C%20low%20voltage%20and%20automotive.%20This%20baseline%20process%20features%201.1V%20CMOS%20logic%2C%204%20core%20device%20Vts%2C%202.5V%20I%2FO%20with%20Overdrive%20(3.3V)%20and%20Underdrive%20(1.8V)%20options%2C%20and%201.8V%20I%2FO%20with%20Underdrive%20(1.5V)%20option.%20The%20PDK%20also%20includes%20APMOM%2C%20MIM%20and%20MOS%20capacitors%2C%20eFuse%20macro%20and%20a%20large%20suite%20of%20passive%20devices.%20A%20wide%20choice%20of%20productized%20metal%20stack%20options%20are%20available.|[borders_all;align-left;11px;b]GF%2040LP-RF%2FmmWave,[borders_all;align-left;11px]Using%20a%20multi-Vt%20baseline%20logic%20process%2C%20the%2040nm%20LP-RF%2FmmWave%20technology%20adds%20RF-specific%20features%20such%20as%20Deep%20n-well%20devices%2C%20LDMOS%2C%20Parasitic%20bipolar%20devices%2C%20MOS%20varactor%2C%20Precision%20resistors%2C%20MIMcaps%2FMOMcaps%2C%20Inductors%2C%20Thick%20metals%20and%20Transmission%20lines.%20The%20mmWave%20library%20includes%20passive%20structures%20such%20as%20Microstrip%20line%2C%20co-planar%20waveguide%2C%20slow-wave%20co-planar%20waveguide%2C%2045%2F90%20degree%20bend%2C%20tee%20junction.|[borders_all;borders_all;align-left;11px;b]GF%2028SLP,[borders_all;align-left;11px]The%20GLOBALFOUNDRIES%2028%20Super%20Low%20Power%20(SLP)%20process%20technology%20platform%20is%20optimized%20for%20power%2C%20performance%20and%20die%20cost.%20The%201.0V%20baseline%20PDK%20offers%20thin%20and%20medium%20oxide%20I%2FOs%2C%204%20core%20transistors%2C%20SRAM%2C%20APMOM%2FNVCAP%2C%20Inductor%2C%20Dnwell%20and%205V%20LDMOS%20with%20underdrive%20option.|[borders_all;align-left;11px;b]GF%2028SLP-RF,[borders_all;align-left;11px]The%20GLOBALFOUNDRIES%2028SLP-RF%20addon%20module%20is%20ideal%20for%20power%20and%20price%20sensitive%20applications%20in%20mobile%2C%20wireless%2C%20consumer%20and%20other%20markets%2C%20that%20require%20GHz%20performance%20with%20flexible%20mixed-technology%20options%20for%20RF.%20In%20addition%20to%20the%20baseline%20library%2C%20the%20RF%20kit%20offers%20BEOL%20stacks%20with%20Ultra%20Thick%20Metal%2C%20Poly%20resistor%20and%20RF%20models.|[b]GF%2022FDSOI,[11px;align-left]22nm%20FD-SOI%20transistor%20technology%20delivers%20FinFET-like%20performance%20and%20energy-efficiency%2C%20including%20up%20to%2070%25%20lower%20power%20vs.%2028nm.%20The%20simultaneous%20high%20Ft%20%2Fhigh%20Fmax%2C%20high%20self%20gain%20and%20high%20current%20efficiency%20of%2022FDX%20enables%20efficient%2C%20ultra%20low%20power%20analog%2FRF%2FmmWave%20designs.%20The%20process%20offers%20four%20core%20device%20Vt%E2%80%99s%20(FBB%2C%20RBB%20%26%20eLVT)%2C%20two%20I%2FO%20Vt%E2%80%99s%20%40%201.2V%2F1.5V%2F1.8V%2C%20full%20set%20of%20active%20and%20passive%20devices%2C%20LDMOS%20(3.3V%2F5.0V%2F6.5V)%2C%20Low%20power%3A%200.4V%20to%200.8V%20Vnom%2C%20Reference%20flow%20for%20back-gate%20biasing%2C%20RF%20BEOL%20with%20ultra%20thick%20metal%20stacks.%20The%20eMRAM%20module%20supports%20fully%20integrated%2C%20versatile%20memory%20for%20storage%20and%20compute%20for%20IoT%20and%20MCU.[/vc_table][/vc_column][/vc_row][vc_row css_animation=”” row_type=”row” use_row_as_full_screen_section=”no” type=”full_width” angled_section=”no” text_align=”left” background_image_as_pattern=”without_pattern”][vc_column][vc_empty_space height=”24px”][vc_column_text]More specifications in PDF[/vc_column_text][vc_empty_space][/vc_column][/vc_row]