IHP SG13S SiGe:C Bipolar/Analog, Ft/Fmax= 250/340GHz, 7M/MIM
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IHP SG13SCu FEOL process SG13S together with 8 layer Cu BEOL from X-FAB containing 4 thin & 2 thick Cu layers, a thin Al layer and Al top layer.
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IHP SG13CMOS SiGe:C includes all features of SG13G2 but not HBT, CMOS 7M/MIM, PDK von SG13G2
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IHP SG13CMOS5L SiGe:C A CMOS technology offered for open-source education designs, includes FEOL SG13CMOS, but noisolated NMOS, 4 thin metal layer and one 2μm thick TopMetal and no MIM capacitor
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IHP SG13G2 SiGe:C Bipolar/Analog, Ft/Fmax= 350/450GHz, 7M/MIM
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IHP SG13G2Cu FEOL process SG13G2 together with 8 layer Cu BEOL from X-FAB containing 4 thin & 2 thick Cu layers, a thin Al layer and Al top layer.
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IHP SG13G3 FEOL, the same FEOL process SG13G3Cu, with Al-BEOL option for research and prototyping purpose only
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IHP SG13G3Cu SiGe:C Bipolar/Analog, Ft/Fmax= 470/650GHz FEOL process with 8 layer Cu BEOL from X-FAB containing 4 thin & 2 thick Cu layers, a thin Al layer and Al top layer
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IHP BEOL SG13 (M1 and Metal Layers Above)
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SG25H7_EPIC A monolithic photonic BiCMOS technology combining CMOS, high-performance npn HBTs (fT / fmax = >350/>500 GHz), and full photonic device set for C/O-band., 7M/MIM,Ge Photo-diode
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IHP SG25H7_PIC Incl. additional photonic design layers along with BiCMOS BEOL layers on SOI wafers.
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IHP INTM4TM2 Interposer technology, 2 thin and 2 thick Al-BEOL layer on a HRes substrate, MIM capacitor, Thin film Res.
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Bumping (available for all IHP technologies), SG13C on request | | |
Localized Back side Etching (available for IHP technologies with AL BEOL only), not offered for EPIC/PIC runs | | |
TSV to ground (SG13S / G2) | | |
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MEMRES Module, CMOS integrated memristive module based on resistive TiN / HfO2-x / TiN switching devices, on time fee offered for SG13G2
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MEMRES Module additional fee per mm²
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