EUROPRACTICE brings design and manufacturing capability of Application-Specific Integrated Circuits (ASICs) within the technical and financial reach of any customer from academia or industry.
Through EUROPRACTICE, you can get affordable access to the technologies of 9 world-leading ASIC manufacturing foundries.
Our current portfolio includes a wide range of processes, ranging from mature 0.35-μm nodes down to state-of-the-art 7nm FinFET. It offers diverse solutions, such as digital logic, RF, mixed-signal, high-voltage, and many more.
This variety allows our customers to create devices for multiple application domains, for instance IoT, Datacom, High Energy Physics (HEP), AI, Medical and Automotive markets.
ASIC Foundries and Technologies | ||||||||
|---|---|---|---|---|---|---|---|---|
Foundry | ams OSRAM | EM Microelectronic | GlobalFoundries | IHP | ST-Microelectronics | TSMC | UMC | X-FAB |
↓ Technology | ||||||||
HV | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ✔︎ | |||
Logic | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ✔︎ | |
MS | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ✔︎ | |
NVM | ✔︎* | ✔︎ | ||||||
OPTO | ✔︎ | ✔︎ | ||||||
RF | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ||
SiGe | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ||||
↓ Node | ||||||||
0.35 µm | ✔︎ | ✔︎ | ||||||
0.25 µm | ✔︎ | |||||||
0.18 µm | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ||||
0.16 µm | ✔︎ | |||||||
0.13 µm | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ✔︎ | |||
0.11 µm | ✔︎ | ✔︎ | ||||||
90 nm | ✔︎ | |||||||
65 nm | ✔︎ | ✔︎ | ✔︎ | |||||
55 nm | ✔︎ | ✔︎ | ✔︎ | |||||
45 nm | ✔︎ | |||||||
40 nm | ✔︎ | ✔︎ | ||||||
28 nm | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ||||
22 nm | ✔︎ | ✔︎ | ||||||
16 nm | ✔︎ | |||||||
12 nm | ✔︎ | |||||||
7 nm | ✔︎ | |||||||
* The post-process OxRAM Non-Volatile Memory is provided by CEA-LETI / IRT Nanoelec.
ASIC Foundries and Technologies | ||||||||
|---|---|---|---|---|---|---|---|---|
Foundry | ams | EM Microelectronic | Global Foundries | IHP | ST-Microelectronics | TSMC | UMC | X-FAB |
↓ Technology | ||||||||
HV | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ✔︎ | |||
Logic | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ✔︎ | |
MS | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ✔︎ | |
NVM | ✔︎* | ✔︎ | ||||||
OPTO | ✔︎ | ✔︎ | ||||||
RF | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ||
SiGe | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ||||
↓ Node | ||||||||
0.35 µm | ✔︎ | ✔︎ | ||||||
0.25 µm | ✔︎ | |||||||
0.18 µm | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ||||
0.16 µm | ✔︎ | |||||||
0.13 µm | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ✔︎ | |||
0.11 µm | ✔︎ | ✔︎ | ||||||
90 nm | ✔︎ | |||||||
65 nm | ✔︎ | ✔︎ | ✔︎ | |||||
55 nm | ✔︎ | ✔︎ | ✔︎ | |||||
45 nm | ✔︎ | |||||||
40 nm | ✔︎ | ✔︎ | ||||||
28 nm | ✔︎ | ✔︎ | ✔︎ | ✔︎ | ||||
22 nm | ✔︎ | ✔︎ | ||||||
16 nm | ✔︎ | |||||||
12 nm | ✔︎ | |||||||
7 nm | ✔︎ | |||||||
* The post-process OxRAM Non-Volatile Memory is provided by CEA-LETI / IRT Nanoelec.
