CEA-LETI

Technologies

CEA-LETI Photonics

We are currently working on the CEA-Leti offer.

Please contact cime-prototypage@grenoble-inp.fr 

 

Pioneering silicon photonics for more than 15 years, CEA-Leti has designed a technology toolbox featuring state-of-the-art performance for communication, computing and optical sensing.

 

CEA-Leti’s versatile Si-SiN photonics platform offers a broad range of processes on 300 mm wafers that leverage world-class pre-industrialization equipment. CEA-Leti’s fabrication platform enables large-scale integration of active and passive devices in a flexible CMOS compatible process.

CEA-Leti Si-310 Active and Passive Photonics platform.
Technology characteristics
Main features:
300 mm SOI substrate with 310 nm Si
SiN layer
2μm buried oxide
Selective Ge epitaxy
6 implant levels for p-type and n-type for modulators and doped Si heaters
3 silicon patterning steps for Si heights of 0, 65, 165 and 310 nm (193nm immersion lithography)
Silicide modulator contacts
Metal heater
2 metal layers
Passive structures:
1D & 2D Grating couplers
Shallow, deep rib and strip waveguides & bends
Active structures:
High speed Photodetectors
High speed Modulators
High performance building blocks:
Fixed cells, Parametrised Cells and Black boxes
Devices operating at O-Band and C-Band
Mature device library in a Process Design Kit (PDK), compatible with conventional CAD tools
Available options:
Optical edge coupler
Open 3D Post-processes: UBM, Bumps & µ-Bumps
Application area
Communication: Telecom, Datacom, 5G infrastructures, quantum cryptography for cybersecurity Computing: Computer communication for High Performance Computing (HPC), quantum computing and neuromorphic computing for AI Optical sensing: gas sensing, structural health monitoring and 3D sensing such as LIDAR
Frontend/backend tools
Cadence IC 6.1.7 (DK version 2019.4 – Mar.-20)
Synopsys Opto Designer 2019.03 (DK version 2019.03_10.4 – Jun.-20)
Tanner S-Edit/L-Edit 2020.1 update 5
Simulation tools
Eldo (Siemens EDA)
Verification tools
Calibre (Siemens EDA)

CEA-Leti’s Ultra-Low Loss SiN photonics platform is based on a high quality LPCVD Si3N4 layer. This platform is serving energy-efficient nonlinear photonics and quantum optics. This technology shows very high cross-wafer device performance uniformities, low thermal susceptibility, and high power damage thresholds.

CEA-Leti SiN-Photonics IC Si3N4-800
Technology characteristics
800nm High Quality LPCVD Si3N4 200nm standard smallest feature size Deep trench for edge coupler
Application area
Communication: ground and space communication, quantum cryptography for cybersecurity Computing: quantum computing Optical sensing: biosensing, biomicroscopy and 3D sensing such as LIDAR
Frontend/backend tools
Cadence IC 6.1.7 (DK version 2019.4 – Mar.-20)
Simulation tools
Eldo (Siemens EDA)
Verification tools
Calibre (Siemens EDA)