Technology characteristics | Met. layers: 4/5. Option B -4ML or Option M -5ML
Minimum Gate length: 180nm [drawn]
Dual Gate Oxides: 3.0nm ThinGOX [1.98V max] and 6.5nm DualGOX [3.63V max]
FEOL isolation: Non Epi or p-Epi substrate [16-24Ω.cm], STI [Shallow trench isolation]
Supply voltage: 1.8V or 3.3V |
| EKV models with parameters for near/sub Vth operations
Digital cell library optimized for Low Power/Low Voltage
I/O pads library with low leakage ESD protections |
| Ultra-Low Power, Ultra-Low Voltage
Analog Designs (low leakage, low noise, pairing)
Mixed signal (100kGates/mm2)
Low current (nA bias), Low voltage (down to 0.4V) |
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| Spectre (Cadence), Incisive (Cadence) |
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Parasitics extraction tools | |
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| 10-12 weeks from MPW run deadline to packaged parts |