EUROPRACTICE-IC provides Multi-Project-Wafer prototyping and Volume Production services of imec Silicon Photonics and Silicon Nitride Photonics.
Imec is a world-leading research and innovation hub in nanoelectronics and digital technologies headquartered in Belgium.
It offers cost-effective, highly reproducible and CMOS compatible fabrication. Customers can benefit from regularly scheduled MPW runs and dedicated mask runs.
Complete PDKs include technology details, design and layout rules, and a library of building block components.
imec currently offers the following technologies for EUROPRACTICE customers:
The ISiPP50G platform co-integrates a wide variety of passive and active components to support a wide range of optical transceiver architectures at data rates of 25Gb/s or 50Gb/s. The offered integrated components include low-loss waveguides, efficient vertical grating or broadband edge couplers, high-speed silicon electro-optic modulators, high-speed silicon-germanium electro-absorption modulators, high-speed germanium waveguide photo-detectors, and an option for exposed waveguides (removing oxide from the top of the waveguides so exposing them to ambient). iSiPP50G offers state-of-the-art performance, design flexibility and superior CD and thickness control. It is a fixed process technology (130nm) with a validated device library.
imec Si-Photonics iSiPP50G | ||
|---|---|---|
Modules | Description | Enabled devices |
3 silicon patterning steps | 3 etch depths in 220nm Si: 70nm, 160nm; 220nm (193 nm litho) | Strip/rib waveguides, various passive optical devices, silicon taper |
Gate oxide and Poly-Silicon layer | 1 etch depth: full poly etch (160nm) (193nm litho) | Advanced grating couplers, poly-Si waveguide |
Ion implantation in Si | 8 implants levels: 4x n-type and 4x p-type | Si carrier depletion, injection and accumulation devices, Ge Photodectors, doped Si resistors, … |
Ge module | 100% Ge(Si) RPCVD selective epitaxial growth & 2x implants levels | Ge Photodectors Ge(Si) EA
modulator |
Silicide tungsten
contact module | Ohmic contacts to doped silicon | Standard CMOS contacts plugs |
Metal heater | Metal layer for heaters | Metal heaters |
Two-level metal
interconnect | Cu-based two-level metallization | Standard CMOS interconnects |
Aluminium passivation | Aluminium finish metallization | Standard CMOS interconnects |
Deep trench | Deep trench to expose edge coupler facets | Edge couplers |
imec Si-Photonics Passives+ technology is a subset of iSiPP50G technology.
Main characteristics:
